Parameter

Description

Units

Material

Cell material. Multi-crystalline silicon is mc-Si, single-crystal silicon is c-Si. See the table above for thin-film cell material abbreviations.

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Series Cells

Number of cells in series per cell string.

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Parallel Cells

Number of cell strings in parallel.

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BVoco

Open circuit temperature coefficient

V/°C

MBVoc

Coefficient representing dependence of Bvoco on irradiance. Typically zero.

V/°C

Vintage

Year field measurement data were collected.

year

BVmpo

Temperature coefficient at module Vmp under reference conditions

V/°C

MBVmp

Coefficient representing dependence of Bvmpo on irradiance. Typically zero.

V/°C

AImp

Normalized maximum power temperature coefficient, calculated by dividing alpha by Impo.

1/°C

AIsc

Normalized short circuit temperature coefficient, calculated by dividing alpha by Isco

1/°C

N

Empirically determined factor, also called the "diode factor."

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dTC

Temperature difference between the cell and module back surface under reference conditions.

°C

FD

Fraction of diffuse irradiance used by module. For flat-plate modules, FD=1; for CPV modules, FD=0; and for low-concentration modules, 0 < FD < 1.

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Ixo

Current at module open circuit voltage of Voc / 2 under reference conditions. Defines one of the five points on the module's I-V curve.

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Ixxo

Current at module open circuit voltage of (Voc + Vmp) / 2under reference conditions.Defines one of the five points on the module's I-V curve.

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A0-4

Empirically determined coefficients used in polynomial representation of solar spectral effects of daily air mass variation on Isc.

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B1-5

Empirically determined coefficients used in polynomial representation of optical effects of the angle of incidence (AOI) on Isc.

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C0-5

Empirically determined performance coefficients that relate Imp, Ix, and Ixx to effective irradiance.

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a, b

Empirically-determined coefficients used in temperature correction calculations.

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